r07ds0998ej0100 rev.1.00 page 1 of 6 jan 15, 2013 data sheet pa2600t1r n-channel mosfet 20 v, 7.0 a, 13.8 m description the pa2600t1r is n-channel mos field effect transistors for switching application. this device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of por table machine and so on. features ? high drain to source voltage ? v dss = 20 v (v gs = 0 v, t a = 25 c) ? 2.5v drive available ? low on-state resistance ? r ds (on)1 = 13.8 m max. (v gs = 4.5 v, i d = 3.5 a) ? r ds (on)2 = 19.1 m max. (v gs = 2.5 v, i d = 3.5 a) ? built-in gate protection diode ? lead-free and halogen-free ordering information part number package pa2600t1r-e2-ax ? 1 6pinhuson2020 note: ? 1.pb-free (this product does not contain pb in the external electrode and other parts.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 20 v gate to source voltage (v ds = 0 v) v gss 12 v drain current (dc) (t c = 25 c) i d(dc) 7.0 a drain current (pulse) ? 1 i d(pulse) 28 a total power dissipation (5 s) ? 2 p t 2.4 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes: ? 1. pw 10 s, duty cycle 1% ? 2. mounted on glass epoxy boar d of 25.4mm x 25.4mm x 0.8mmt r07ds0998ej0100 rev.1.00 jan 15, 2013 6 p inhuson2020
pa2600t1r r07ds0998ej0100 rev.1.00 page 2 of 6 jan 15, 2013 electrical characteristics (t a = 25c) note: ? 1. pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% characteristics symbol min. typ. max. unit test conditions zero gate voltage drain current i dss 1.0 a v ds = 20 v, v gs = 0 v gate leakage current i gss 10 a v gs = 10 v, v ds = 0 v gate cut-off voltage v gs(off) 0.5 1.5 v v ds = 10 v, i d = 1 ma forward transfer admittance ? 1 | y fs | 6.5 s v ds = 10v, i d = 3.5 a drain to source on-state resistance ? 1 r ds(on)1 11.1 13.8 m v gs = 4.5 v, i d = 3.5 a r ds(on)2 14.4 19.1 m v gs = 2.5 v, i d = 3.5 a input capacitance c iss 870 pf v ds = 10 v, v gs = 0 v, f = 1.0 mhz output capacitance c oss 170 pf reverse transfer capacitance c rss 110 pf turn-on delay time t d (on) 12 ns i d = 3.5 a, v dd = 10 v, v gs = 4 v, r g = 6 rise time t r 10 ns turn-off delay time t d (off) 42 ns fall time t f 9 ns total gate charge q g 7.9 nc i d = 7.0 a , v dd = 16 v, v gs = 10 v gate to source charge q gs 1.7 nc gate to drain charge q gd 2.8 nc body diode forward voltage ? 1 v f(s?d) 1.5 v i f = 7.0 a, v gs = 0 v
pa2600t1r r07ds0998ej0100 rev.1.00 page 3 of 6 jan 15, 2013 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 t a -ambient temperature - c p t - total power dissipation - w 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt pw=5sec t a -ambient temperature - c forward bias safe operating area i d ? drain current - a 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d(pulse) =28a i d(dc) =7a t a =25oc single pulse mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) : mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt r th(ch-a) =113.6oc/w single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
pa2600t1r r07ds0998ej0100 rev.1.00 page 4 of 6 jan 15, 2013 drain current vs. drain to source voltage forward transfer characteristics i d ?drain current - a 0 10 20 30 40 50 00.511.52 pulsed 2.5v v gs =4.5v v ds - drain to source voltage - v i d - drain current - a 0.0001 0.001 0.01 0.1 1 10 00.511.52 v ds = 10v pulsed t a =150c 75c 25c -55c v gs - gate to source voltage - v gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) ? gate to source cut-off voltage - v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 0 50 100 150 v ds = 10v i d = 1ma t ch - channel temperature - c | y fs | - forward transfer admittance - s s 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v ds = 10v pulsed t a = 150c 75c 25c -55c i d ? drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 0.1 1 10 100 pulsed 4.5v v gs = 2.5v i d - drain current - a r ds(on) ? drain to source on-state resistance - m 0 10 20 30 40 50 0246810 i d = 3.5a pulsed v gs - gate to source voltage - v
pa2600t1r r07ds0998ej0100 rev.1.00 page 5 of 6 jan 15, 2013 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) ?drain to source on-state resistance - m 0 5 10 15 20 25 -50 0 50 100 150 pulsed i d = 3.5a v gs = 2.5v 4.5v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1,000 10,000 0.1 1 10 100 v gs = 0v f = 1.0mhz c rss c iss c oss v ds ? drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t f , t d(off) , t r - switching time -ns 1 10 100 0.1 1 10 100 t d(on) t r t d(off) t f v dd = 10v v gs = 4.0v r g = 6 i d - drain current - a v ds - drain to source voltage - v 0 2 4 6 8 10 0 5 10 15 20 25 02468 v dd = 20v 16v 10v i d =7.0a v gs v ds q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage i f - diode forward current ? a 1 10 100 00.511.5 pulsed v gs =4.5v 0v 2.5v v f(s?d) - drain to source voltage - v
pa2600t1r r07ds0998ej0100 rev.1.00 page 6 of 6 jan 15, 2013 package drawings (unit: mm) 6pinhuson2020 0.3 0.05 1.6 1.5 0.05 0.25 0.05 3 2 1 4 56 4 s a b m 0.05 0.65 0.03 max.0.75 0.2 0.03 0 to 0.01 s 0.7 0.04 0.05 s 1,2,5,6 : drain 3 : gate 4 : source 2 0.1 2 0.1 a b 1 0.05 1 0.05 0.2 0.65 0.03 0.3 0.05 equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. renesas package code : pwsn0006jd-b
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